Xianliang Mai1,†, Qundao Xu1,†, Zhe Yang1,†, Huan Wang1, Yongpeng Liu1, Yinghua Shen1, Hengyi Hu1, Meng Xu2, Zhongrui Wang2, Hao Tong1,3, Chengliang Wang1,*, Xiangshui Miao1,3, Ming Xu1,3,*
华中科技大学徐明教授、王成亮教授
1 Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China
2 Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China
3 Hubei Yangtze Memory Laboratories, Wuhan, China
† Xianliang Mai, Qundao Xu and Zhe Yang contributed equally to this work.
